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• W2033130189 abstract "Al0.90In0.10N/GaN, AlN/GaN and their superlattices (SLs) grown on GaN by metalorganic vapor phase epitaxy (MOVPE) were studied. A (0001) sapphire substrate was used. X-ray diffraction analysis of 2θ/ω scans and reciprocal space mapping showed that the samples were coherently grown on GaN, and in particular, crack-free AlN of 0.5 μm thickness was grown on GaN. Al0.90In0.10N/GaN (or AlN/GaN) SLs grown on GaN showed a maximum electron mobility of 946 (or 1422) cm2/Vs at room temperature and a nominal sheet carrier density of 2.9 × 1012 (or 7.5 × 1012) cm—2." @default.
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• W2033130189 date "2001-12-01" @default.
• W2033130189 modified "2023-09-27" @default.
• W2033130189 title "Crystal Growth of High-Quality AlInN/GaN Superlattices and of Crack-Free AlN on GaN: Their Possibility of High Electron Mobility Transistor" @default.
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• W2033130189 doi "https://doi.org/10.1002/1521-396x(200112)188:2<895::aid-pssa895>3.0.co;2-g" @default.
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