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• W2033248475 abstract "The initial stage of the oxynitride on Si(1 0 0) 2×1 surface by the thermal annealing incorporated with the nitrogen ion was investigated using photoemission spectroscopy (PES). After growing about 20 Å thermal SiO 2 layer on Si(1 0 0) 2×1 surface, we implanted nitrogen ion with 200 eV ion energy on the surface at RT. Oxynitride and Si 3 N 4 are found to co-exist during the thermal nitridation. PES results of Si 2p and N 1s were shown that N(-Si 2 O) was a major component at 800 °C annealing. The oxygen of this oxynitride was dissolved as a volatile SiO as increasing the nitridation temperature more than 1000 °C and Si 3 N 4 became a majority components. Also, N 1s core-level spectra were shifted toward the low binding energy." @default.
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• W2033248475 date "2003-05-01" @default.
• W2033248475 modified "2023-10-18" @default.
• W2033248475 title "Initial oxynitridation of a Si(1 0 0) 2 × 1 surface by the annealing and low energy nitrogen ion exposure" @default.
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• W2033248475 doi "https://doi.org/10.1016/s0169-4332(03)00136-3" @default.
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