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• W2033294230 abstract "In this letter, a method of using selective area growth (SAG) technique was proposed to fabricate the enhancement-mode (E-mode) AlGaN/GaN heterostructure field effect transistors (HFETs), which can effectively avoid the plasma treatment damage to the active region of HFETs in comparison with the conventional methods. The SAG-HFETs exhibited a good performance of the maximum drain current of 300 mA/mm and peak transconductance of 135 mS/mm with a larger positive threshold voltage of 0.4 V. The results indicate that the SAG technique is a promising method to realize the high performance E-mode GaN based HFETs." @default.
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• W2033294230 date "2011-02-14" @default.
• W2033294230 modified "2023-10-02" @default.
• W2033294230 title "Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique" @default.
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• W2033294230 doi "https://doi.org/10.1063/1.3553229" @default.
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