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- W2033538354 abstract "A series of undoped InSb and InAsxSb1−x layers were grown using tetramer Sb4 and As4 sources on (100)-oriented semi-insulating GaAs and InP substrates with different growth parameters. Very high electron mobilities (70,000 and 110,000 cm2/V⋯s in InSb at 300 and 77 K, respectively) and n-type conductivity are obtained for all alloy compositions. The flux ratio PSb/PIn played a crucial role in determining the surface morphology and the mobility of InSb films. Barrier heights of A1p−AlyGa1−ySb Schottky diodes are measured and are 0.4 eV. A 300 Å Si-doped InAs0.8Sb0.2 channel region sandwiched bet ween undoped Al0.4Ga0.6Sb buffer and gate barrier regions has μ = 1000 cm2/V⋯s and ns = 5.4×1012cm−2 at 300 K. 1 μm ga te FETs made with this heterostructure have shown a maximum extrinsic gm = 160 mS/mm and ƒT = 5 GHz at 300 K." @default.
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- W2033538354 date "1991-05-01" @default.
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- W2033538354 title "Growth and properties of InAsxSb1−x, AlyGa1−ySb, and InAsxSb1−x/AlyGa1−ySb heterostructures" @default.
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- W2033538354 doi "https://doi.org/10.1016/0022-0248(91)91054-e" @default.
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