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- W2033553649 abstract "The results of the first systematic study of the correlation of the light emission from GaAs QW's, 2 nm, 5 nm and 8 nm wide, on the growth rate r in the range from 0.1 μm/h to 1 μm/h at a growth temperature of 620 °C are reported here. Emission energy positions, lineshapes and intensities are found to strongly vary with the growth rate. In particular, we observe that nonstandard low growth rates lead to much less interface roughness, a reduction of impurity and trap concentrations and higher quantum efficiency. For low growth rates the Ga desorption rate depends on growth rate. For higher growth rates it saturates due to the build up of an equilibrium vapor pressure at the surface." @default.
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- W2033553649 date "1989-01-01" @default.
- W2033553649 modified "2023-10-18" @default.
- W2033553649 title "Impact of MBE-growth rate on optical properties of AlGaAs/GaAs quantum well structures" @default.
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- W2033553649 doi "https://doi.org/10.1016/0749-6036(89)90305-4" @default.
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