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- W2033686761 abstract "A chemical-equilibrium model for plasma-enhanced chemical vapor deposition of a-Si:H is developed to interpret the irregular incorporation of As and P. The model shows that the irregularity occurs only for nondoping impurities; their distribution coefficient is inversely proportional to the rf plasma power, which leads to the large As concentration enhancement observed under low-power growth conditions. A configuration-energy diagram is proposed to account for this enhancement based on the preferential formation of stable, inactive As in a configuration other than the usual interconverting three- and fourfold-coordinated sites." @default.
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- W2033686761 date "1989-08-21" @default.
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- W2033686761 title "Chemical-equilibrium model of impurity incorporation in<i>n</i>-type<i>a</i>-Si:H" @default.
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- W2033686761 doi "https://doi.org/10.1103/physrevlett.63.880" @default.
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