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- W2033701262 abstract "A large scale heterostructure array of ZnO nanowires/silicon nanoporous pillar array (Si-NPA) was prepared by a self-catalytic thermal evaporation and vapor-phase transport method, and an ultrahigh field emission current density of 1.55 mA cm−2 was obtained under an operating electric field of 4.0 V μm−1, with a low turn-on field of 1.65 V μm−1. The enhancement factor calculated according to the Fowler–Nordheim theory was ∼3141. The excellent field emission performance was attributed to the unique structure of ZnO/Si-NPA, especially the formation of ZnO nanowires on regular Si pillar array. Our work indicated that ZnO/Si-NPA might be an ideal candidate cathode of potential applications in flat panel displays and high brightness electron sources." @default.
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- W2033701262 date "2010-12-01" @default.
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- W2033701262 title "Enhanced field emission from ZnO nanowires grown on a silicon nanoporous pillar array" @default.
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- W2033701262 doi "https://doi.org/10.1063/1.3516156" @default.
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