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- W2033763911 abstract "We report a growth study of GaP films grown by gas-source molecular beam epitaxy on Si substrates oriented 4° off (100) toward [110]. Reflection high-energy electron diffraction (RHEED), high-resolution X-ray diffraction rocking curve (XRC), and scanning electron microscopy (SEM) were used to characterize material quality. Growth studies were carried out in terms of the growth temperature, VIII ratio, and GaP film thickness. Two different growth methods were used: one-step direct growth and two-step growth, i.e. a thin GaP layer is grown first at a relatively low temperature as a buffer layer, followed by the main GaP layer grown at the normal growth temperature. The results show that with the two-step growth, the material quality of GaP can be greatly improved. Investigation of the effect of using different prelayers (As2, P2, Al, Ga, and Ga + Al) on the quality of GaP films reveals that the Ga prelayer gives the best result. By optimizing the growth conditions, GaP films with very smooth surfaces were obtained." @default.
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- W2033763911 date "1996-07-01" @default.
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- W2033763911 title "Growth studies of GaP on Si by gas-source molecular beam epitaxy" @default.
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