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• W2033818026 startingPage "05EF03" @default.
• W2033818026 abstract "Iridium nanocrystals (Ir-NCs) lying on the Si 3 N 4 /SiO 2 tunneling layer have been demonstrated and Ir-NC-assisted thin-film transistor nonvolatile memory devices were successfully developed. Results show that Ir-NCs with a number density of ∼6×10 11 cm -2 and a particle diameter of 4 to 12 nm can successfully be fabricated as charge trapping centers. Owing to the asymmetric SiO 2 /Si 3 N 4 tunneling layer that increases programming/erasing efficiency, a significant memory window of 5.5 V has potential to be applied to multibit memory devices. Furthermore, after 10 4 s, the memory window is still about 4.0 V in logic states." @default.
• W2033818026 created "2016-06-24" @default.
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• W2033818026 date "2011-05-01" @default.
• W2033818026 modified "2023-09-26" @default.
• W2033818026 title "Iridium Nanocrystal Thin-Film Transistor Nonvolatile Memory with Si₃N₄/SiO₂ Stack of Asymmetric Tunnel Barrier" @default.
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• W2033818026 doi "https://doi.org/10.1143/jjap.50.05ef03" @default.
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