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- W2033852053 abstract "Strain-compensated, highly strained InyGa1 − yP/InxGa1 − xAs/InyGa1 − yP quantum wells have been grown by gas-source molecular beam epitaxy (GSMBE) at a wide growth temperature range of 350 to 525°C. From observation of reflection high-energy electron diffraction (RHEED), we find that a low substrate temperature can increase the RHEED critical layer thickness (lc), defined as when the RHEED pattern becomes spotty. For In0.3Ga0.7As, the lc is about 100 Å at 500°C and more than 600 Å at 350°C. Post-growth annealing can be utilized to increase the quality of strained materials grown at low temperature. Strain compensation is also shown to improve thermal stability against annealing." @default.
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- W2033852053 date "1996-07-01" @default.
- W2033852053 modified "2023-10-16" @default.
- W2033852053 title "Synthesis of highly strained InyGa1 − yP/InxGa1 − xAs/InyGa1 − yP quantum well structures with strain compensation" @default.
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- W2033852053 doi "https://doi.org/10.1016/0022-0248(95)01039-4" @default.
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