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- W2034007064 abstract "Determined by the recent interest in MOS-turn-off thyristors, a simulation-assisted analysis is carried out on the effect of a transversal electric field on the electron-hole plasma generated at high levels of injection, in silicon. Numerical simulations of gate-controlled p+nn+ structures show that a plasma-filled channel cannot be depleted by the application of a transversal field. The electron-hole plasma is influenced by the externally applied field for only a distance of two plasma Debye lengths from the surface, which is in the range of 1 … 100 nm, depending on the level of injection, in typical high-voltage devices." @default.
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- W2034007064 date "1990-10-01" @default.
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- W2034007064 title "On the MOS depletion of a high-level-injection plasma" @default.
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- W2034007064 doi "https://doi.org/10.1016/0038-1101(90)90027-c" @default.
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