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- W2034009763 abstract "Grain growth in Ga 2 O 3 and MnO co-doped ZnO was investigated for sintering from 950° to 1250°C in air. Microstructural observation revealed that the samples sintered at lower temperatures consist of uniform equiaxed grains while the samples sintered at higher temperatures consist of plat-like grains, implying that the grain growth mechanism for the examined ZnO ceramics changes when the sintering temperature increases above about 1150°C. The traditional kinetic grain growth equation was employed to analyze the variation of grain size with sintering temperature and sintering holding time. It was shown that the grain growth exponent, n , increases from 2.17 for samples with uniform equiaxed grain structure to 4.30 for samples with plate like grain structure, while the apparent activation energy, Q , increases from 237 kJ/mol for low-temperature-sintered sample to 405 kJ/mol for high-temperature-sintered samples. The increases in both n and Q were mainly attributed to the difference between the grain morphologies in low- and high-temperature ranges. The underestimation of the sizes of the plate-like grains was also considered to be another important origin for the higher values of n and Q for the high-temperature-sintered samples." @default.
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- W2034009763 date "2011-09-01" @default.
- W2034009763 modified "2023-09-26" @default.
- W2034009763 title "Grain Growth in (Ga, Mn)-Codoped ZnO Ceramics" @default.
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