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- W2034010667 abstract "Very sensitive near infrared (NIR) emission and visible/NIR cw dye laser based transient absorption techniques are employed to explore elementary steps of redox reactions at semiconductor materials. The focus is on chemistry relevant to the conversion of abundant long wavelength solar photons (red and NIR) into electricity in photoelectrochemical cells. Direct reduction of excited O 2 ( 1 (Delta) ), a long-lived NIR energy carrier, has been demonstrated at a silicon electrode, opening up the possibility of direct conversion of the chemically stored 1 eV quantum of O 2 ( 1 (Delta) ) into electrical energy in a singlet O 2 driven regenerative cell. In a parallel direction, the rise of the one electron oxidation intermediate I 2 - produced upon photo-oxidation of iodide at dye sensitized as well as bare TiO 2 colloidal particles has been observed for the first time by monitoring the 2 (pi) g $IMP 2 (Sigma) u + absorption in the 700 - 800 nm region. Elucidation of the detailed steps of halide-to-halogen oxidation at the semiconductor/solution interface is important for progress in NIR photon energy storage and conversion as the intrinsically modest driving forces of such processes require careful optimization of the efficiency of each reaction step." @default.
- W2034010667 created "2016-06-24" @default.
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- W2034010667 date "1992-12-09" @default.
- W2034010667 modified "2023-09-23" @default.
- W2034010667 title "Redox chemistry at Si and TiO 2 semiconductor materials" @default.
- W2034010667 doi "https://doi.org/10.1117/12.130583" @default.
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