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- W2034031907 abstract "Plasma discharge is used to alter the surface potential in undoped GaAs. The results determine the origin and the magnitude of photomodulation in photoreflectance from undoped GaAs. We examine photoreflectance for 30--70-kV/cm surface electric fields in undoped GaAs grown on heavily doped n- or p-type GaAs underlayers, ${mathit{UN}}^{+}$ and ${mathit{UP}}^{+}$ samples, respectively. Photoreflectance for 2--500-ensuremath{mu}W/${mathrm{cm}}^{2}$ laser modulation intensity was analyzed using separate electro-optic functions to determine the magnitude of the built-in electric field in the dark and the laser illuminated samples. Before plasma discharge, photomodulation of the built-in electric field in ${mathit{UP}}^{+}$ samples was about three times that in ${mathit{UN}}^{+}$ samples at 0.2 mW/${mathrm{cm}}^{2}$. The large modulation in ${mathit{UP}}^{+}$ samples appears to have come from surface modulation effects, possibly from poor pinning of the surface Fermi energy. A hydrogen plasma discharge lasting 4 s produced long term effects in ${mathit{UP}}^{+}$ samples. It increased the magnitude of the electric field in ${mathit{UP}}^{+}$ samples from ensuremath{sim}40 kV/cm to ensuremath{sim}60 kV/cm, at 0.2 mW/${mathrm{cm}}^{2}$. The discharge more than doubled the amplitude of ${mathit{UP}}^{+}$ photoreflectance signal and increased the number of Franz-Keldysh oscillations. After discharge, the photomodulation voltage for ${mathit{UP}}^{+}$ samples was reduced from 0.32 to 0.14 V at 0.2 mW/${mathrm{cm}}^{2}$, and became comparable with bulk photovoltage from (p-i-n) structures and ${mathit{UN}}^{+}$ structures." @default.
- W2034031907 created "2016-06-24" @default.
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- W2034031907 date "1994-03-15" @default.
- W2034031907 modified "2023-10-18" @default.
- W2034031907 title "Surface and bulk modulation in photoreflectance from undoped GaAs" @default.
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- W2034031907 doi "https://doi.org/10.1103/physrevb.49.7306" @default.
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