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- W2034093913 abstract "In this study, the synthesis and semiconducting properties of cation and defect-doped KTaO3 films is reported. KTaO3 is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. While numerous studies have investigated the thin-film growth of semiconducting perovskites, little is reported about semiconducting KTaO3 thin films. In this work, the films were grown on (1 0 0) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the KTaO3 lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting KTaO3:Ca films was as low as 10 Ω cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were 0.27 cm2/V s and 3.2 × 1018 cm−3, respectively. Crystallinity and microstructure of the KTaO3:Ca films were examined using X-ray diffraction and field-emission scanning electron microscopy." @default.
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- W2034093913 date "2004-01-01" @default.
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- W2034093913 title "Growth of semiconducting KTaO3 thin films" @default.
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- W2034093913 doi "https://doi.org/10.1016/s0038-1101(03)00240-5" @default.
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