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- W2034098238 abstract "Elevated temperature (ET) multiple energy N, P, and N/P implantations were performed into p-type 6H-SiC epitaxial layers. For comparison, room temperature (RT) N and P implantations were also performed. In the N/P coimplanted material a sheet resistance of 2.1×102 Ω/□ was measured, which is lower compared to the values measured in N or P implanted material of the same net donor dose. The RT P implantation resulted in heavy lattice damage and consequently low P electrical activation, even after 1600 °C annealing. After annealing the Rutherford backscattering yield either coincided or came close to the virgin level for ET implantations and RT N implantation, whereas for RT P implantation the yield was high, indicating the presence of high residual damage. Vertical n-p junction diodes were made by selective area ET N, P, and N/P implantations and RT N and P implantations using a 2.5 μm thick SiO2 layer as an implant mask. The diodes were characterized by capacitance–voltage and variable temperature current–voltage measurements." @default.
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- W2034098238 date "1998-05-15" @default.
- W2034098238 modified "2023-10-14" @default.
- W2034098238 title "Material and n-p junction properties of N-, P-, and N/P-implanted SiC" @default.
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- W2034098238 doi "https://doi.org/10.1063/1.367329" @default.
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