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- W2034100609 abstract "Epitaxial layers of GaAs grown by molecular beam epitaxy at 190–220°C, were investigated using high resolution X-ray diffractometers and topography. The use of high Bragg angle symmetric and asymmetric reflections made it possible to determine the spatial variation of the epilayer lattice constants relative to those of the substrate. The lattice constant in a direction parallel to the surface turned out to be equal to the lattice constant of the substrate, meaning a lack of misfit dislocations. This finding was confirmed by X-ray Lang reflection topography. The lattice mismatch in a direction perpendicular to the surface depended inversely on the growth temperature. For all samples, a small gradient of this mismatch was observed. The computer simulation of X-ray rocking curves and step etching of one of the layers enabled one to conclude that the lattice mismatch was decreasing towards the surface, which suggests a temperature increase of 5–10°C/h during layer growth." @default.
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- W2034100609 title "X-ray diffractometric examinations of GaAs epitaxial layers grown by molecular beam epitaxy at low temperature" @default.
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- W2034100609 doi "https://doi.org/10.1016/0022-0248(93)90019-s" @default.
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