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• W2034111171 abstract "Amorphous cobalt-phosphorus alloy is grown on SiO2 and Cu by chemical vapor deposition from dicobaltoctacarbonyl and trimethylphosphine at 250 °C, 300 °C, and 350 °C. Film properties most relevant to adoption into back-end chip fabrication have been studied. Co(P) is poor in P and C near the Cu interface, relative to the free surface, and no evidence of copper phosphide formation during deposition is observed. Approximately 1.4 nm Co(P) is required for continuity on Cu, and the adhesion between the two materials is strong as measured by a scotch tape peel test, despite C incorporation in Co(P). Dissociation of trimethylphosphine into atomic P and C on the surface of Cu combined with the high reactivity of dicobaltoctacarbonyl on SiO2 result in poor selectivity for growth on Cu compared to SiO2." @default.
• W2034111171 created "2016-06-24" @default.
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• W2034111171 date "2010-04-01" @default.
• W2034111171 modified "2023-09-23" @default.
• W2034111171 title "Chemically capping copper with cobalt" @default.
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• W2034111171 doi "https://doi.org/10.1016/j.mee.2009.08.017" @default.
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