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- W2034147905 abstract "A new device, the charge-flow transistor (CFT), has been developed to achieve integrated MOS compatibility in sensor applications, such as gas, humidity, and fire detection, where one is interested in monitoring the transverse resistance of a thin film. The resistive material is incorporated into the gate structure of the CFT in such a way that there is a time delay between the application of the gate-to-source voltage and the appearance of a complete channel. This time delay depends on the resistivity of the thin film. A theory of device operation is presented, together with experimental results on the first CFT’s. These results confirm the principles of operation, and demonstrate the utility of the CFT for making fully integrated sensing devices." @default.
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- W2034147905 date "1977-01-15" @default.
- W2034147905 modified "2023-10-10" @default.
- W2034147905 title "The charge-flow transistor: A new MOS device" @default.
- W2034147905 cites W2001576358 @default.
- W2034147905 doi "https://doi.org/10.1063/1.89306" @default.
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