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• W2034163819 abstract "Atomic structures of Si(111) and Ge(111) clean cleaved surfaces at low temperatures(10–300 K) are discussed. It is experimentally shown that some low-T cleavages can produce strongly disordered Ge(111)-2 × 1 surfaces (“amorphous-like” surfaces), however, with some traces of the 2 × 1 structure. The band bending and the Fermi-level pinning are also briefly considered. It is supposed that near-to-surface dislocations can be introduced during the Ge and Si crystal cleavages and strongly affect the Fermi-level and electronic properties of these cleavages. The possible role of dislocations in Schottky barrier formation is also mentioned." @default.
• W2034163819 created "2016-06-24" @default.
• W2034163819 creator A5049975043 @default.
• W2034163819 date "1986-03-01" @default.
• W2034163819 modified "2023-09-27" @default.
• W2034163819 title "Some recent results on low-temperature studies of cleaved Si and Ge surfaces" @default.
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• W2034163819 doi "https://doi.org/10.1016/0039-6028(86)90831-9" @default.
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