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- W2034166235 abstract "Thin silicon oxynitride films with excellent uniformity were prepared by plasma enhanced CVD. Oxygen incorporation leads to improved breakdown behavior and to reduction of the film conductivity compared to PECVD silicon nitride layers. Thin PECVD silicon oxynitride films deposited on single crystal and poly-Si exhibit good insulation properties in both cases." @default.
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- W2034166235 date "1987-10-01" @default.
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- W2034166235 title "Electrical properties of thin PECVD silicon oxynitride films" @default.
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- W2034166235 doi "https://doi.org/10.1016/0169-4332(87)90094-8" @default.
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