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- W2034166650 abstract "Abstract Following previous observations of detachment of amorphous, anodic alumina films from aluminium by 100 keV H + ions, further experiments have been carried out using H + , D + , 3 He + and 4 He + ions, at energies in the range of 0.5–270 keV, to irradiate anodized aluminium with oxides of thickness from 30 to 500 nm. Surface damage was investigated by field-emission-gun scanning electron microscopy and transmission electron microscopy. Detachment of the oxide, which takes place close to, or at, the metal/oxide interface, occurred only following irradiation by H + and D + ions, with the ions being stopped in the metal rather than the oxide. The threshold fluence for initiation of detachment is approximately 3×10 15 ions cm −2 . No detachment was detected following irradiations by 3 He + and 4 He + ions with fluences up to 5×10 16 ions cm −2 and ranges similar to those of H + and D + ions, although vacancy production is much greater for helium ions. These findings indicate that detachment is associated with accumulation of hydrogen species in the vicinity of the metal/oxide interface, rather than condensation of vacancies. Such behaviour is consistent with the expected mobility of hydrogen, but not of helium, in aluminium near room temperature." @default.
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- W2034166650 date "2002-12-01" @default.
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- W2034166650 title "Damage of alumina films by medium energy hydrogen and helium ions" @default.
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- W2034166650 doi "https://doi.org/10.1016/s0168-583x(02)01486-6" @default.
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