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- W2034170196 abstract "Profiles of channeled and dechanneled 31P ions in the energy range 30–900 keV have been measured in 〈100〉, 〈111〉, 〈112〉, and 〈110〉 Si. The maximum range, Rmax, of the channeled ions has been determined and used to calculate values of electronic stopping power. The variation of these values with substrate orientation agrees qualitatively with that predicted by the Firsov theory, although the actual values are 2–3 times the Firsov prediction. Dechanneled profiles (450 keV) were measured in 0.3° steps up to 1.2° for all four orientations and in 2° steps up to 10° for the 〈100〉 and 〈111〉 orientations. The effect of tilt direction on the dechanneling was studied. Dechanneling from the 〈111〉, 〈112〉, and 〈110〉 orientations exhibited a marked sensitivity to the direction of tilt. By tilting in an appropriate maximum-dechanneling direction, dechanneling from the 〈100〉 and 〈111〉 orientations was found to be continuous, starting with the 0.3° tilt and saturating for tilts above 4.2°. The projected range, Rp, determined from the fully dechanneled or random distributions, was found to vary almost linearly with energy and has a slope of ∼1.1 μm/MeV." @default.
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- W2034170196 date "1973-07-01" @default.
- W2034170196 modified "2023-10-14" @default.
- W2034170196 title "Channeling and dechanneling of ion-implanted phosphorus in silicon" @default.
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- W2034170196 doi "https://doi.org/10.1063/1.1662689" @default.
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