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• W2034170766 endingPage "175301" @default.
• W2034170766 startingPage "175301" @default.
• W2034170766 abstract "Abstract The structural and nanomechanical properties of InN films grown on Si(1 0 0) using femtosecond pulsed laser deposition were studied for different growth conditions. Atomic nitrogen was generated by either thermal cracking or laser-induced breakdown (LIB) of ammonia. Optical emission spectroscopy was conducted on the laser plasma and used to observe atomic nitrogen formation. An indium buffer layer was initially grown on the Si substrate at low temperature. The surface structure and morphology were investigated by in situ reflection high-energy electron diffraction, ex situ atomic force microscopy and x-ray diffraction (XRD). The results show that the initial buffer indium layers were terminated with the In(2 × 1) structure and had a smooth surface. With increased coverage, the growth mode developed from two-dimensional layers to three-dimensional islands. At room temperature (RT), formation of submicrometre islands resulted in mixed crystal structure of In and InN. As the substrate temperature was increased to 250–350 °C, the crystal structure was found to be dominated by fewer In and more InN, with only InN formed at 350 °C. The XRD patterns show that the grown InN films have wurtzite crystal structure. The film hardness near the surface was observed to increase from less than 1 GPa, characteristic of In for the sample grown at RT using the thermal cracker, to a hardness of 11 GPa at 30 nm from surface, characteristic of InN for samples grown at 350 °C by LIB. The hardness at deep indents reaches the hardness of the Si substrate of ∼12 GPa." @default.
• W2034170766 created "2016-06-24" @default.
• W2034170766 creator A5006992199 @default.
• W2034170766 creator A5018887891 @default.
• W2034170766 creator A5043364762 @default.
• W2034170766 creator A5081975927 @default.
• W2034170766 date "2013-04-05" @default.
• W2034170766 modified "2023-09-27" @default.
• W2034170766 title "Structural and nanomechanical properties of InN films grown on Si(1 0 0) by femtosecond pulsed laser deposition" @default.
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• W2034170766 cites W1966421090 @default.
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• W2034170766 cites W1974638646 @default.
• W2034170766 cites W1977105452 @default.
• W2034170766 cites W1978049944 @default.
• W2034170766 cites W1979062160 @default.
• W2034170766 cites W1980230186 @default.
• W2034170766 cites W1981194497 @default.
• W2034170766 cites W1984966877 @default.
• W2034170766 cites W1988213965 @default.
• W2034170766 cites W1988518305 @default.
• W2034170766 cites W1995212605 @default.
• W2034170766 cites W1995421517 @default.
• W2034170766 cites W2003845930 @default.
• W2034170766 cites W2004725334 @default.
• W2034170766 cites W2006899294 @default.
• W2034170766 cites W2009403224 @default.
• W2034170766 cites W2011508691 @default.
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• W2034170766 cites W2018173670 @default.
• W2034170766 cites W2021554716 @default.
• W2034170766 cites W2021800897 @default.
• W2034170766 cites W2022622531 @default.
• W2034170766 cites W2022935776 @default.
• W2034170766 cites W2025716625 @default.
• W2034170766 cites W2030903965 @default.
• W2034170766 cites W2031060771 @default.
• W2034170766 cites W2035208414 @default.
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• W2034170766 cites W2047313422 @default.
• W2034170766 cites W2047317219 @default.
• W2034170766 cites W2050659890 @default.
• W2034170766 cites W2051166244 @default.
• W2034170766 cites W2052597963 @default.
• W2034170766 cites W2053544891 @default.
• W2034170766 cites W2054732275 @default.
• W2034170766 cites W2057668566 @default.
• W2034170766 cites W2059477010 @default.
• W2034170766 cites W2061944995 @default.
• W2034170766 cites W2062033890 @default.
• W2034170766 cites W2063187432 @default.
• W2034170766 cites W2063275837 @default.
• W2034170766 cites W2081109739 @default.
• W2034170766 cites W2085501671 @default.
• W2034170766 cites W2086179789 @default.
• W2034170766 cites W2092705377 @default.
• W2034170766 cites W2093258331 @default.
• W2034170766 cites W2117604922 @default.
• W2034170766 cites W2124974294 @default.
• W2034170766 cites W2148460983 @default.
• W2034170766 cites W215635751 @default.
• W2034170766 cites W328930509 @default.
• W2034170766 cites W4210669045 @default.
• W2034170766 doi "https://doi.org/10.1088/0022-3727/46/17/175301" @default.
• W2034170766 hasPublicationYear "2013" @default.
• W2034170766 type Work @default.
• W2034170766 sameAs 2034170766 @default.
• W2034170766 citedByCount "7" @default.
• W2034170766 countsByYear W20341707662014 @default.
• W2034170766 countsByYear W20341707662015 @default.
• W2034170766 countsByYear W20341707662017 @default.
• W2034170766 countsByYear W20341707662021 @default.
• W2034170766 crossrefType "journal-article" @default.
• W2034170766 hasAuthorship W2034170766A5006992199 @default.
• W2034170766 hasAuthorship W2034170766A5018887891 @default.
• W2034170766 hasAuthorship W2034170766A5043364762 @default.
• W2034170766 hasAuthorship W2034170766A5081975927 @default.
• W2034170766 hasConcept C111368507 @default.
• W2034170766 hasConcept C113196181 @default.
• W2034170766 hasConcept C120665830 @default.
• W2034170766 hasConcept C121332964 @default.
• W2034170766 hasConcept C127313418 @default.
• W2034170766 hasConcept C167735695 @default.
• W2034170766 hasConcept C171250308 @default.
• W2034170766 hasConcept C185592680 @default.
• W2034170766 hasConcept C19067145 @default.
• W2034170766 hasConcept C191897082 @default.
• W2034170766 hasConcept C192562407 @default.
• W2034170766 hasConcept C194760766 @default.
• W2034170766 hasConcept C207114421 @default.
• W2034170766 hasConcept C2777081994 @default.
• W2034170766 hasConcept C2777289219 @default.
• W2034170766 hasConcept C2779227376 @default.
• W2034170766 hasConcept C2780064504 @default.
• W2034170766 hasConcept C3045981 @default.
• W2034170766 hasConcept C37982897 @default.
• W2034170766 hasConcept C43617362 @default.
• W2034170766 hasConcept C49040817 @default.

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