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• W2034174924 abstract "We study GaInAs/GaInNAs superlattice structures grown on InP substrate as potential candidates for photoconductive terahertz devices or saturable absorbers working at 1.55 μm wavelength. The N-rich GaInNAs layers are flat, with no three-dimensional islanding, and act as trapping layers where carriers can recombine rapidly. The carrier lifetime in GaInAs/GaInNAs superlattice was measured for various growth parameters using time-resolved differential transmission experiments at 1.55 μm wavelength. The carrier lifetime is found to depend strongly on N content and can be reduced down to 3.8 ps for samples with 14% of N. The mechanisms involved in the capture process of photocarriers are discussed." @default.
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• W2034174924 date "2009-10-05" @default.
• W2034174924 modified "2023-10-18" @default.
• W2034174924 title "Epitaxial growth and picosecond carrier dynamics of GaInAs/GaInNAs superlattices" @default.
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• W2034174924 doi "https://doi.org/10.1063/1.3226102" @default.
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