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- W2034180669 abstract "A general quantum and electronic theory able to explain the electric and photoelectric experimental properties of the metal-semiconductor contacts is proposed. The theory consists firstly in calculating the electric space charge due to the quantum mechanical tunneling of the electrons from the metal into the semiconductor, and vice-versa, and to the metal and semiconductor bands bending. Then the electric charge so obtained is utilised to solve in an appropriate and complete way the Poisson equation so as to determine the electric field and potential as functions of the abscissa x. The electric field F(x) is employed to obtain a new expression for the junction capacitance C, holding in the general case of a non-uniform charge, whereas the electric potential νi(x) is used to calculate general expressions for the thermionic and photoelectric currents i and iph, respectively, taking into account in this both the tunneling probability through the energy barrier and the many-valley structure of the semiconductor energy bands. Finally, from νi(x), C, i and iph four new expressions of the energy barrier height of the contact are deduced. The theoretical results relative to the barrier height so determined (which hold for both n-and p-type semiconductors) are compared with published experimental values obtained, by means of capacitance and photocurrent measurements: (a) on contacts between n-type CdS and Au, Cu, Ag and Pt; (b) on contacts between n-type GaAs and Au, Ag, Cu, Sn, Al and Pt and; (c) on contacts between p-type GaAs and Au and Al. The agreement between the theoretical and experimental values is very good." @default.
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- W2034180669 title "A detailed analysis of the metal-semiconductor contact" @default.
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