Matches in SemOpenAlex for { <https://semopenalex.org/work/W2034187554> ?p ?o ?g. }
- W2034187554 endingPage "2235" @default.
- W2034187554 startingPage "2226" @default.
- W2034187554 abstract "For the next technological generations of integrated circuits, the traditional challenges faced by etch plasmas (profile control, selectivity, critical dimensions, uniformity, defects, …) become more and more difficult, intensified by the use of new materials, the limitations of lithography, and the recent introduction of new device structures and integration schemes. Particularly in the field of the interconnect fabrication, where dual-damascene patterning is performed by etching trenches and vias in porous low-k dielectrics, the main challenges are in controlling the profile of the etched structures, minimizing plasma-induced damage, and controlling the impact of various types of etch stops and hard mask materials. Metallic hard masks can help thanks to their high selectivity toward low-k materials, and by avoiding low-k exposure to potentially degrading ashing plasmas. In this paper, we will present some key issues related to the patterning of narrow porous SiOCH trenches with a metallic (TiN) hard mask. Narrow trenches (down to 40 nm width) can be opened into TiN with a critical dimensions bias (around 10 nm) attributed to carbon and silicon containing deposits on the photoresist and TiN sidewalls during the etching. Porous SiOCH etching using a TiN hard mask instead of the conventional SiO2 hard mask may lead to severe profile distortions, attributed to TiFx compounds which settle on the trenches sidewalls. A chuck temperature of 60 °C and fluorine-rich plasmas are required to minimize those distortions. An etching process leading to almost straight porous SiOCH profiles presenting a slight bow has been developed. However a wiggling phenomenon has been evidenced for the etching of narrow and deep trenches. This phenomenon is attributed to the highly compressive residual stress in the TiN hard mask, which is released when the dielectric is not mechanically strong enough to withstand it." @default.
- W2034187554 created "2016-06-24" @default.
- W2034187554 creator A5001365155 @default.
- W2034187554 creator A5004025863 @default.
- W2034187554 creator A5004553094 @default.
- W2034187554 creator A5008339489 @default.
- W2034187554 creator A5016409303 @default.
- W2034187554 creator A5021672302 @default.
- W2034187554 creator A5036548951 @default.
- W2034187554 creator A5044430127 @default.
- W2034187554 creator A5046703825 @default.
- W2034187554 creator A5059539903 @default.
- W2034187554 creator A5074822583 @default.
- W2034187554 date "2008-11-01" @default.
- W2034187554 modified "2023-10-16" @default.
- W2034187554 title "Patterning of narrow porous SiOCH trenches using a TiN hard mask" @default.
- W2034187554 cites W1964559815 @default.
- W2034187554 cites W1978464946 @default.
- W2034187554 cites W1992214743 @default.
- W2034187554 cites W1993498038 @default.
- W2034187554 cites W1997890565 @default.
- W2034187554 cites W2001110870 @default.
- W2034187554 cites W2002296091 @default.
- W2034187554 cites W2005380170 @default.
- W2034187554 cites W2009221461 @default.
- W2034187554 cites W2025916505 @default.
- W2034187554 cites W2027386612 @default.
- W2034187554 cites W2033640388 @default.
- W2034187554 cites W2048703686 @default.
- W2034187554 cites W2054332486 @default.
- W2034187554 cites W2061218260 @default.
- W2034187554 cites W2068542435 @default.
- W2034187554 cites W2073942131 @default.
- W2034187554 cites W20762444 @default.
- W2034187554 cites W2086341527 @default.
- W2034187554 cites W2088430905 @default.
- W2034187554 cites W2108478370 @default.
- W2034187554 cites W2154418404 @default.
- W2034187554 cites W2158733747 @default.
- W2034187554 cites W4253172069 @default.
- W2034187554 cites W4301847752 @default.
- W2034187554 doi "https://doi.org/10.1016/j.mee.2008.06.025" @default.
- W2034187554 hasPublicationYear "2008" @default.
- W2034187554 type Work @default.
- W2034187554 sameAs 2034187554 @default.
- W2034187554 citedByCount "27" @default.
- W2034187554 countsByYear W20341875542012 @default.
- W2034187554 countsByYear W20341875542013 @default.
- W2034187554 countsByYear W20341875542014 @default.
- W2034187554 countsByYear W20341875542015 @default.
- W2034187554 countsByYear W20341875542016 @default.
- W2034187554 countsByYear W20341875542017 @default.
- W2034187554 countsByYear W20341875542018 @default.
- W2034187554 countsByYear W20341875542019 @default.
- W2034187554 crossrefType "journal-article" @default.
- W2034187554 hasAuthorship W2034187554A5001365155 @default.
- W2034187554 hasAuthorship W2034187554A5004025863 @default.
- W2034187554 hasAuthorship W2034187554A5004553094 @default.
- W2034187554 hasAuthorship W2034187554A5008339489 @default.
- W2034187554 hasAuthorship W2034187554A5016409303 @default.
- W2034187554 hasAuthorship W2034187554A5021672302 @default.
- W2034187554 hasAuthorship W2034187554A5036548951 @default.
- W2034187554 hasAuthorship W2034187554A5044430127 @default.
- W2034187554 hasAuthorship W2034187554A5046703825 @default.
- W2034187554 hasAuthorship W2034187554A5059539903 @default.
- W2034187554 hasAuthorship W2034187554A5074822583 @default.
- W2034187554 hasBestOaLocation W20341875542 @default.
- W2034187554 hasConcept C100460472 @default.
- W2034187554 hasConcept C107187091 @default.
- W2034187554 hasConcept C130472188 @default.
- W2034187554 hasConcept C134406635 @default.
- W2034187554 hasConcept C136525101 @default.
- W2034187554 hasConcept C142724271 @default.
- W2034187554 hasConcept C154843443 @default.
- W2034187554 hasConcept C159985019 @default.
- W2034187554 hasConcept C160671074 @default.
- W2034187554 hasConcept C171250308 @default.
- W2034187554 hasConcept C187937830 @default.
- W2034187554 hasConcept C191897082 @default.
- W2034187554 hasConcept C192562407 @default.
- W2034187554 hasConcept C204223013 @default.
- W2034187554 hasConcept C204787440 @default.
- W2034187554 hasConcept C2779227376 @default.
- W2034187554 hasConcept C49040817 @default.
- W2034187554 hasConcept C525849907 @default.
- W2034187554 hasConcept C6648577 @default.
- W2034187554 hasConcept C71924100 @default.
- W2034187554 hasConceptScore W2034187554C100460472 @default.
- W2034187554 hasConceptScore W2034187554C107187091 @default.
- W2034187554 hasConceptScore W2034187554C130472188 @default.
- W2034187554 hasConceptScore W2034187554C134406635 @default.
- W2034187554 hasConceptScore W2034187554C136525101 @default.
- W2034187554 hasConceptScore W2034187554C142724271 @default.
- W2034187554 hasConceptScore W2034187554C154843443 @default.
- W2034187554 hasConceptScore W2034187554C159985019 @default.
- W2034187554 hasConceptScore W2034187554C160671074 @default.
- W2034187554 hasConceptScore W2034187554C171250308 @default.
- W2034187554 hasConceptScore W2034187554C187937830 @default.