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- W2034188274 abstract "In general there are two ways of producing a highly transparent film which is also electrically conducting: (1) the use of a highly degenerate semiconductor film which has a sufficiently high energy gap to be transparent in the visible region; (2) the use of a very thin metal film with the onset of the high reflection suppresed by interference supported by matching dielectric layers on either side. The only semiconductors which have large energy gaps and sufficiently high electrical mobilities and carrier concentrations to give good electrical conductivity have proved to be the oxides of indium, tin and cadmium and alloys of these metals. Films of indium tin oxide and cadmium tin oxide were made by reactively ion plating at controlled rates of the metal and oxygen to give films with sheet resistance less than 100 Ω/□ and transmittances of 80%. The metal films of interest are generally restricted to copper, gold and silver films. These films must be very thin (of the order of 15 nm) and are sandwiched between layers of a suitable dielectric, such as TiO2 or ZnO. This study of the performance that is possible with conducting oxides and thin metals showed that visible windows can be made with sheet resistances of less than 10 Ω/□. The important choices of material and technique for the oxide are those that give a high electrical mobility, i.e. Cd2SnO4 and In2O3 are preferable to indium tin oxide. Copper is shown to be a material which, although it does not have as high an average visible transmittance for a given sheet resistance as silver, is more neutral in its wavelength-selective characteristics." @default.
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- W2034188274 date "1981-06-01" @default.
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- W2034188274 title "Production of transparent electrically conducting films by ion plating" @default.
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- W2034188274 doi "https://doi.org/10.1016/0040-6090(81)90215-7" @default.
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