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• W2034189940 abstract "In this study, the influence of substrate properties (e.g. roughness characteristics and chemical composition) on the electrical resistivity of evaporated molybdenum thin films is investigated as a function of varying parameters, such as film thickness (25–115 nm) and post-deposition annealing with temperatures up to T PDA = 900 °C. A thermally oxidized silicon wafer with very low surface roughness was used as one substrate type. In contrast, a low temperature co-fired ceramics substrate with a glass encapsulant printed in thick film technology is the representative for rough surface morphology. The electrical resistivity follows the prediction of the size effect up to T PDA = 600 °C independent of substrate nature. On the silicon-based substrate, the thickness-independent portion of the film resistivity ρ g in the “as deposited” state is about 29 times higher than the corresponding bulk value for a mono-crystalline sample. Thin films of this refractory metal on the SiO 2 /Si substrate exhibit an average grain size of 4.9 nm and a negative temperature coefficient of resistivity (TCR). On the glass/ceramic-based substrate, however, ρ g is half the value as compared to that obtained on the SiO 2 /Si substrate and the TCR is positive." @default.
• W2034189940 created "2016-06-24" @default.
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• W2034189940 date "2005-10-01" @default.
• W2034189940 modified "2023-09-23" @default.
• W2034189940 title "Effect of substrate properties and thermal annealing on the resistivity of molybdenum thin films" @default.
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• W2034189940 doi "https://doi.org/10.1016/j.tsf.2005.05.003" @default.
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