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- W2034215013 abstract "Abstract The penetration of channeled electrons through an area distorted by an edge or screw dislocation is considered. It is shown that this process may be described in the approximation of a sharp shift of atomic rows and planes, which leads to dechanneling about 30% of particles passing through the distorted area. The maximum length of dechannelling in a dislocated crystal and the threshold electron energy, above which the dechannelling length decreases with increase in the energy, was established. Approximate estimates of these values for silicon and tungsten were also received. Proceeding from the carried out analysis of the microscopic pattern of channelled particles passing through dislocations, the principle of detailed balance was considered, and a general transport equation, describing also dechanneling by dislocations besides the usual multiple scattering, was formulated." @default.
- W2034215013 created "2016-06-24" @default.
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- W2034215013 date "1993-01-01" @default.
- W2034215013 modified "2023-09-23" @default.
- W2034215013 title "Dechanneling of high energy electrons by dislocations" @default.
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- W2034215013 doi "https://doi.org/10.1080/10420159308225491" @default.
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