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- W2034226487 abstract "The roles of defect-induced and impurity-induced changes in interfacial energy on the adhesion of metal films on sapphire substrates were studied using ion implantation. Chemical species that decrease (Cr) or increase (Ni) the interfacial free energy of iron-sapphire interfaces were implanted at the interface. Effects of irradiation-produced defects were studied by implanting iron to a similar concentration in companion iron/sapphire samples and by bombarding Cr/sapphire couples. Rutherford backscattering-channeling, Auger electron spectroscopy, and X-ray photoelectron spectroscopy indicated that only recoil mixing occurred and that the intermixed region was limited to several nanometers in thickness. Measurements using a pull test and a scratch test revealed a marked increase in adhesion for Cr implantations, a modest increase for Fe implantation, and no change for the Ni implantations. It is proposed that both chemical changes and irradiation-produced defects increase the work of adhesion by decreasing the interfacial free energy. In the Ni-implanted samples, the two effects annul each other. A role for irradiation-produced defects was confirmed by the increase in adhesion observed for ion-bombarded chromium films on sapphire. The already very low interfacial energy was further decreased by the presence of irradiation-produced defects." @default.
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- W2034226487 date "1994-01-01" @default.
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- W2034226487 title "Design of metal-sapphire interfaces for enhanced adhesion" @default.
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- W2034226487 doi "https://doi.org/10.1016/s0257-8972(94)80032-4" @default.
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