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- W2034226867 abstract "In this paper, a simple and accurate analytical model for current-voltage and Transconductance characteristics of Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-m</sub> /GaN modulation doped field effect transistors (MODFETs) devices is presented. In proposed model, the effects of spontaneous and piezoelectric polarization at the hetero-interface and gate-voltage dependence of the Fermi level are considered. Variation of drain current after saturation, parasitic resistance of drain and source, field-dependent mobility, are contained in the model and gate to source dependant is utilized for the low field mobility. By implement model in MATLAB current-voltage characteristics and transconductance have been obtained. The agreement between the model and experimental result validate the proposed analytical model." @default.
- W2034226867 created "2016-06-24" @default.
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- W2034226867 date "2009-12-01" @default.
- W2034226867 modified "2023-09-26" @default.
- W2034226867 title "An accurate analytical model for current-voltage characteristics and transconductance of Al<inf>m</inf>Ga<inf>1−m</inf>/GaN MODFETs" @default.
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- W2034226867 doi "https://doi.org/10.1109/edssc.2009.5394228" @default.
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