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• W2034236592 endingPage "4144" @default.
• W2034236592 startingPage "4136" @default.
• W2034236592 abstract "We report results of a theoretical study of the electronic structure of point defects on semiconducting oxide surfaces, with an application to ${mathrm{SnO}}_{2}$(110). The scattering theoretical method is used and detailed formal developments are given for the rutile crystal structure. For the ${mathrm{SnO}}_{2}$(110) surface a series of monovacancy and divacancy models are studied, corresponding to the removal of one or two atoms from the outer surface layers. None of these defect models gives rise to a bound defect state in the optical gap. Similar to the case of the defect-free surface, the main defect-induced features are O p--derived resonances in the valence-band region and Sn s--derived resonances in the conduction-band region. The results are interpreted in terms of the ionicity of the material and compared with those for other oxide surfaces." @default.
• W2034236592 created "2016-06-24" @default.
• W2034236592 creator A5007564307 @default.
• W2034236592 creator A5065313889 @default.
• W2034236592 date "1986-03-15" @default.
• W2034236592 modified "2023-09-25" @default.
• W2034236592 title "Electronic structure of point defects on oxide surfaces" @default.
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• W2034236592 doi "https://doi.org/10.1103/physrevb.33.4136" @default.
• W2034236592 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/9938837" @default.
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