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• W2034248075 startingPage "1668" @default.
• W2034248075 abstract "The selective Y 1 Ba 2 Cu 3 O y epitaxial growth and, as its advanced technology, MgO/Y 1 Ba 2 Cu 3 O y selective heteroepitaxy are demonstrated. The film growth was done by the pressure-controlled magnetron sputtering on the MgO substrate with partial SiO coating. The epitaxial Y 1 Ba 2 Cu 3 O y films were grown in the patterned shape through a SiO window, showing the critical temperature of 77 K. In the remaining wafer region where the film contacted the underlying SiO, significant Si and Ba interdiffusion was found, resulting in the amorphous and insulating Y-Ba-Cu-Si-O. In the same way, the selective heteroepitaxy was also successfully obtained." @default.
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• W2034248075 date "1990-09-01" @default.
• W2034248075 modified "2023-09-26" @default.
• W2034248075 title "Selective Heteroepitaxial Growth of (100)-MgO/(001)-Y₁Ba₂Cu₃O_y on MgO Substrate and Its Superconductivity" @default.
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• W2034248075 doi "https://doi.org/10.1143/jjap.29.1668" @default.
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