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- W2034250091 abstract "Abstract A polymethacrylate containing pendant 2-methylbenzothiazole (pBVMA) with good thermal stability was synthesized by free radical polymerization. The devices based on pBVMA possess a sandwich structure comprising bottom indium-tin oxide (ITO) electrode and top Al electrode. The as-fabricated device exhibits the dynamic random access memory (DRAM) behavior with an ON/OFF current ratio up to 105 and can endure 108 read cycles under −1 V pulse voltage. The effect of the film thickness on the device performance was investigated and the devices fabricated with 75 nm and 45 nm thick pBVMA films were both found to exhibit DRAM type memory behaviors, which may indicate that the Al nanoparticles had no penetration into the thin film during the vacuum-deposition process. The molecular simulation and physical theoretical models were analyzed and the mechanism of the DRAM performance may be attributed to the weak electron withdrawing ability of the molecule." @default.
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- W2034250091 date "2012-05-01" @default.
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- W2034250091 title "A new DRAM-type memory devices based on polymethacrylate containing pendant 2-methylbenzothiazole" @default.
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- W2034250091 doi "https://doi.org/10.1016/j.matchemphys.2012.02.063" @default.
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