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• W2034252649 abstract "We present the surface and interfacial chemical analysis of sputter deposited TiNi thin films over Si (100) substrates using Rutherford backscattering spectrometry (RBS), secondary ionization mass spectrometry (SIMS), and grazing incidence x-ray diffraction analysis. Upon annealing to high temperatures, significant diffusion of Ni into the Si substrate was observed. The analysis of the RBS and SIMS spectra confirm the net movement of the film species into the substrate. Further, we discuss the formation mechanism and the composition distribution surrounding the TiNi/Si interface that proves conducive for the nucleation and growth of the detected nickel silicide compound." @default.
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• W2034252649 date "2009-03-15" @default.
• W2034252649 modified "2023-09-23" @default.
• W2034252649 title "Surface and interface reactions of sputtered TiNi/Si thin films" @default.
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• W2034252649 doi "https://doi.org/10.1063/1.3082126" @default.
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