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- W2034258259 abstract "Anomalous diffusion is often observed for acceptors diffused or implanted into compound semiconductors such as and . We present a model for this type of diffusion, and use as an example the anomalous annealing behavior of Be‐implanted semi‐insulating (SI) . In the bulk of the crystal, we can simulate the major features of the observed experimental profiles using a relatively simple model which includes fast interstitial‐substitutional diffusion but not out‐diffusion or gettering to damage. However, in the near‐surface region, out‐diffusion of the implanted impurity must be considered in order to simulate accurately impurity migration. The resulting profiles demonstrate that enhanced diffusion in a narrow band of concentrations is a critical determinant of the post‐anneal impurity profile and suggest that Be may diffuse by an interstitial‐substitutional mechanism in . Several mechanisms have been proposed to explain why Be diffusion in the bulk is slower at higher and lower Be concentrations. These include gradients in the ionization coefficient, the effect of the substitutional species concentration on the potential of the interstitial species, and electric fields formed at the p‐i or p‐n junction and in the p+ regions. We believe that the depletion of Fe in the Be‐diffused region may be due to the position of the Fermi level and the electric field in the p‐type region. These conclusions are corroborated by studies of Fe diffusion in ." @default.
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- W2034258259 date "1987-02-01" @default.
- W2034258259 modified "2023-10-14" @default.
- W2034258259 title "Simulation of Anomalous Acceptor Diffusion in Compound Semiconductors" @default.
- W2034258259 doi "https://doi.org/10.1149/1.2100478" @default.
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