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- W2034291145 abstract "Low-frequency electrooptic coefficients have been measured for three semiconductors at 10.5 microns. The results are <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>r_{c} = (5.5 pm 1) times 10^{-12}</tex> m/V for CdS, <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>r_{41} = (1.4 pm 0.2) times 10^{-12}</tex> m/V for ZnTe, and <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>r_{41} = (1.6 pm 0.1) times 10^{-12}</tex> m/V for GaAs. A comparison is made of the efficiencies of these materials in different modulator configurations. The effect of photoelectrically induced space charge is discussed briefly." @default.
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- W2034291145 date "1968-01-01" @default.
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- W2034291145 title "Measurements of the electrooptic effect in CdS, ZnTe, and GaAs at 10.6 microns" @default.
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- W2034291145 doi "https://doi.org/10.1109/jqe.1968.1074913" @default.
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