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• W2034298782 abstract "We have investigated the effect of atomic layer deposition (ALD) on the electrical properties of colloidal PbS quantum dot field-effect transistors (PbS QD-FETs). Low-temperature Al2O3 ALD process was used to fill up the pore spaces of PbS QD films containing 1, 2-ethanedithiol ligands. Upon deposition of Al2O3 on PbS film, the PbS QD-FETs showed ambipolar behavior. The treated film retained this property for over 2 months, despite of exposure to air. This change in the electrical properties of the PbS QD-FETs is attributed to the formation of electron channels in the Al2O3-passivated PbS film. We conclude that these electron transport channels in the AlxOy-PbS film are formed due to substitution of the Pb sites by Al metal and chemical reduction of Pb2+ ions, as determined by an analysis of the depth profile of the film using secondary ion mass spectrometry and X-ray photoelectron spectroscopy." @default.
• W2034298782 created "2016-06-24" @default.
• W2034298782 creator A5024030240 @default.
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• W2034298782 date "2015-03-02" @default.
• W2034298782 modified "2023-10-16" @default.
• W2034298782 title "Atomic layer deposition effect on the electrical properties of Al₂O₃-passivated PbS quantum dot field-effect transistors" @default.
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• W2034298782 doi "https://doi.org/10.1063/1.4914304" @default.
• W2034298782 hasPublicationYear "2015" @default.
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