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- W2034319382 abstract "N- and p-type regions have been produced in GaN using Si+ and Mg+/P+ implantation, respectively, and subsequent annealing at ∼1100 °C. Carrier activation percentages of 93% for Si and 62% for Mg were obtained for implant doses of 5×1014 cm−2 of each element. Conversely, highly resistive regions (≳5×109 Ω/⧠) can be produced in initially n- or p- type GaN by N+ implantation and subsequent annealing at ∼750 °C. The activation energy of the deep states controlling the resistivity of these implant-isolated materials is in the range 0.8–0.9 eV. These process modules are applicable to the fabrication of a variety of different GaN-based electronic and photonic devices." @default.
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- W2034319382 date "1995-09-04" @default.
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- W2034319382 title "Ion implantation doping and isolation of GaN" @default.
- W2034319382 doi "https://doi.org/10.1063/1.114518" @default.
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