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- W2034321362 startingPage "035701" @default.
- W2034321362 abstract "The electronic structure and chemical properties of the interface between indium tin oxide (ITO) modified by a fluorinated self-assembled monolayer (F-SAM) and a N , N '-bis(1-naphthyl)- N , N '-diphenyl-1,1'-diphenyl-1,4'-diamine (α-NPD) layer were investigated in order to clarify the effects of the F-SAM modification of ITO anodes on the driving voltage and lifetime of organic light-emitting diodes (OLEDs). Ultraviolet and X-ray photoelectron spectroscopy revealed that the F-SAM modification of ITO led to a shallower highest occupied molecular orbital level in the α-NPD layer near the interface than in conventionally treated ITO, a chemical reaction between F-SAM and α-NPD, and the migration of adsorbed fluorine into the α-NPD layer. These results indicate that high conductance, the suppression of crystallization, and the inhibition of oxidation in the hole-transporting layer along with a small hole-injection barrier height at the anode/HTL interface contribute to the excellent properties of OLEDs having ITO anodes modified by F-SAM." @default.
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- W2034321362 date "2012-02-16" @default.
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- W2034321362 title "Properties of Interface between Organic Hole-Transporting Layer and Indium Tin Oxide Anode Modified by Fluorinated Self-Assembled Monolayer" @default.
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- W2034321362 doi "https://doi.org/10.1143/jjap.51.035701" @default.
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