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• W2034321451 startingPage "3734" @default.
• W2034321451 abstract "Permalloy films were deposited by rf-diode sputtering on silicon and glass substrates. The in-plane film stress was measured as a function of film thickness. The cause of stress changes with film thickness is discussed. The deposition rate and the in-plane stress have been correlated with various process parameters, such as rf power, argon pressure, and substrate bias. A regression analysis yields an excellent fit to the experimental data. The in-plane stress in the film was measured using the wafer-bending method and the x-ray method. The stress of Permalloy films on silicon wafer can be either compressive or tensile, depending on the deposition parameters. The stress increases with increased deposition rate. Stress-free films on silicon can be obtained for a deposition rate of about 7.5 nm/min. The films have good magnetic properties when deposited in these conditions." @default.
• W2034321451 created "2016-06-24" @default.
• W2034321451 creator A5008517351 @default.
• W2034321451 creator A5073625843 @default.
• W2034321451 date "1989-10-15" @default.
• W2034321451 modified "2023-09-30" @default.
• W2034321451 title "rf-diode sputtered Permalloy film" @default.
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• W2034321451 doi "https://doi.org/10.1063/1.344059" @default.
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