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• W2034332222 abstract "It is shown that Mg deposition at room temperature on a GaN(0001) surface, obtained in situ by molecular beam epitaxy, gives rise to a layer-by-layer epitaxial growth mode. The study by reflection high-energy electron diffraction and scanning tunneling microscopy clearly evidences that a two-dimensional nucleation growth mechanism occurs from the very first Mg monolayer deposited. A complete covering of the GaN surface is obtained from the deposition of the first two monolayers of Mg." @default.
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• W2034332222 date "2008-06-09" @default.
• W2034332222 modified "2023-10-16" @default.
• W2034332222 title "Layer-by-layer epitaxial growth of Mg on GaN(0001)" @default.
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• W2034332222 doi "https://doi.org/10.1063/1.2943323" @default.
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