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- W2034333965 abstract "Abstract Results are presented of studies made to qualify photothermal-reflection spectroscopy for use as an ion implant process monitoring tool in a semiconductor production environment. The spectrometer used was the Therma-Probe 150 from Therma-Wave, Inc. Data is presented on the sensitivity of the system to the basic implant parameters: dose (fluency), energy, and species. Data is also presented on the sensitivity to ion channeling, dose rate, and time of measurement. The studies were limited to the low-to-medium-dose range, 1 × 1011 to 1 × 1014 ions/cm2, and to the energy range of 25 to 200 keV. Possible implications of the results on characteristics of implant damage are briefly discussed." @default.
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- W2034333965 date "1987-01-01" @default.
- W2034333965 modified "2023-09-30" @default.
- W2034333965 title "Thermal-wave measurements of ion implanted silicon" @default.
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- W2034333965 doi "https://doi.org/10.1016/0168-583x(87)90901-3" @default.
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