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• W2034347741 endingPage "4241" @default.
• W2034347741 startingPage "4241" @default.
• W2034347741 abstract "GaN films were grown on 3C-SiC substrates by metalorganic vapor phase epitaxy (MOVPE) using 1,1-dimethylhydrazine (DMHy) as the N source. The crystal structure was strongly affected by both the growth temperature and the V/III ratio. At 600° C, only hexagonal GaN films with their c -axis perpendicular to the substrate surface were grown. At 800° C, relatively high V/III ratios resulted in the growth of hexagonal GaN with their c -axis oriented in the [111] direction while cubic GaN films were obtained at lower V/III ratios. The origin of [111]-oriented hexagonal GaN is also discussed." @default.
• W2034347741 created "2016-06-24" @default.
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• W2034347741 date "1997-07-01" @default.
• W2034347741 modified "2023-10-03" @default.
• W2034347741 title "Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy" @default.
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• W2034347741 doi "https://doi.org/10.1143/jjap.36.4241" @default.
• W2034347741 hasPublicationYear "1997" @default.
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