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• W2034348124 startingPage "432" @default.
• W2034348124 abstract "The structural inhomogeneities of hydrogenated amorphous silicon (a-Si:H) prepared at high-deposition rates (20–27 Å/s) have been studied by the small angle X-ray scattering (SAXS) technique by changing the rf-electrode (cathode) bias voltages for controlling the ion flux impinging on the growing film surface. The total bonded hydrogen contents of the deposited films are independent of dc-bias, while light-induced degradation is significantly suppressed at the cathode bias V c =+25 V. It is found that structural fluctuation in the range of 10–400 Å as evaluated by SAXS is reduced to about one half at V c =+25 V in comparison with that of conventional deposition conditions at a rate of ∼1 Å/s." @default.
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• W2034348124 date "1998-02-01" @default.
• W2034348124 modified "2023-10-14" @default.
• W2034348124 title "Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions" @default.
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• W2034348124 doi "https://doi.org/10.1143/jjap.37.432" @default.
• W2034348124 hasPublicationYear "1998" @default.
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