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- W2034374306 abstract "An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology." @default.
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- W2034374306 date "2010-10-01" @default.
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- W2034374306 title "Nanoscale strained-Si MOSFET physics and modeling approaches: a review" @default.
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