Matches in SemOpenAlex for { <https://semopenalex.org/work/W2034385499> ?p ?o ?g. }
Showing items 1 to 67 of
67
with 100 items per page.
- W2034385499 abstract "In the manufacture of integrated circuits by electron-beam direct writing technique, the pattern shift caused by wafer warpage has been corrected by placing the reference mark on entire chips on the wafer and registration has been made for each chip. In the model experiment proposed in this paper, the number of registrations can be reduced significantly if model points are defined on the wafer. The pattern shift can be estimated for the entire wafer surface by the cubic interpolation method using model points and registration results.A high-voltage, high-current MOSFET has been realized as a new type of power transistor. Major problems in the development were how to increase the breakdown voltage and how to reduce the on-resistance. The latter arises from the series resistance in the gate offset region, which is employed to obtain a high breakdown voltage. A structure with a “field-plate” overhanging the gate electrode is proposed to reduce the series resistance and to increase the breakdown voltage. A one-dimensional analysis of this structure is given.Important consequences of the field-plate are that the ion-implemented region underneath it is pinched-off and that the pinch-off voltage can be kept low even at ion-implementation dosage high enough to reduce the series resistance. Both p-channel and n-channel power MOSFET's have been fabricated. Maximum current of 10 A, a drain breakdown voltage of 200 V, and a transconductance of 1 S have been obtained.A theoretical consideration has been given to the performance comparison between the MOSFET and bipolar transistor as power devices based on their operation principles. It is shown that the MOSFET has good prospects in high-power, high-speed applications due to its inherent thermal stability and better switching characteristics, but there is still room for technological improvement in its transconductance and on-resistance." @default.
- W2034385499 created "2016-06-24" @default.
- W2034385499 creator A5008678694 @default.
- W2034385499 creator A5043537939 @default.
- W2034385499 date "1980-04-01" @default.
- W2034385499 modified "2023-09-25" @default.
- W2034385499 title "Registration techniques on warpage wafer for eb direct writing" @default.
- W2034385499 cites W1977699328 @default.
- W2034385499 doi "https://doi.org/10.1002/ecja.4400630414" @default.
- W2034385499 hasPublicationYear "1980" @default.
- W2034385499 type Work @default.
- W2034385499 sameAs 2034385499 @default.
- W2034385499 citedByCount "1" @default.
- W2034385499 crossrefType "journal-article" @default.
- W2034385499 hasAuthorship W2034385499A5008678694 @default.
- W2034385499 hasAuthorship W2034385499A5043537939 @default.
- W2034385499 hasConcept C119321828 @default.
- W2034385499 hasConcept C119599485 @default.
- W2034385499 hasConcept C127413603 @default.
- W2034385499 hasConcept C14485415 @default.
- W2034385499 hasConcept C160671074 @default.
- W2034385499 hasConcept C165801399 @default.
- W2034385499 hasConcept C172385210 @default.
- W2034385499 hasConcept C192562407 @default.
- W2034385499 hasConcept C195370968 @default.
- W2034385499 hasConcept C195905723 @default.
- W2034385499 hasConcept C2779283907 @default.
- W2034385499 hasConcept C49040817 @default.
- W2034385499 hasConceptScore W2034385499C119321828 @default.
- W2034385499 hasConceptScore W2034385499C119599485 @default.
- W2034385499 hasConceptScore W2034385499C127413603 @default.
- W2034385499 hasConceptScore W2034385499C14485415 @default.
- W2034385499 hasConceptScore W2034385499C160671074 @default.
- W2034385499 hasConceptScore W2034385499C165801399 @default.
- W2034385499 hasConceptScore W2034385499C172385210 @default.
- W2034385499 hasConceptScore W2034385499C192562407 @default.
- W2034385499 hasConceptScore W2034385499C195370968 @default.
- W2034385499 hasConceptScore W2034385499C195905723 @default.
- W2034385499 hasConceptScore W2034385499C2779283907 @default.
- W2034385499 hasConceptScore W2034385499C49040817 @default.
- W2034385499 hasLocation W20343854991 @default.
- W2034385499 hasOpenAccess W2034385499 @default.
- W2034385499 hasPrimaryLocation W20343854991 @default.
- W2034385499 hasRelatedWork W1672762362 @default.
- W2034385499 hasRelatedWork W1998207926 @default.
- W2034385499 hasRelatedWork W2076273486 @default.
- W2034385499 hasRelatedWork W2117423971 @default.
- W2034385499 hasRelatedWork W2297618121 @default.
- W2034385499 hasRelatedWork W2333641928 @default.
- W2034385499 hasRelatedWork W2432110661 @default.
- W2034385499 hasRelatedWork W2526765774 @default.
- W2034385499 hasRelatedWork W2596859557 @default.
- W2034385499 hasRelatedWork W2896351077 @default.
- W2034385499 hasRelatedWork W2951228984 @default.
- W2034385499 hasRelatedWork W2994644868 @default.
- W2034385499 hasRelatedWork W3003718255 @default.
- W2034385499 hasRelatedWork W3040912862 @default.
- W2034385499 hasRelatedWork W3115116261 @default.
- W2034385499 hasRelatedWork W3167465558 @default.
- W2034385499 hasRelatedWork W643600295 @default.
- W2034385499 hasRelatedWork W88897361 @default.
- W2034385499 hasRelatedWork W2307168160 @default.
- W2034385499 hasRelatedWork W2776734146 @default.
- W2034385499 isParatext "false" @default.
- W2034385499 isRetracted "false" @default.
- W2034385499 magId "2034385499" @default.
- W2034385499 workType "article" @default.