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- W2034452597 abstract "InxGa1—xAs/GaAs heterostructures of various thicknesses of InxGa1—xAs layer and various indium contents were grown by means of molecular beam epitaxy on a (100)-oriented GaAs semi-insulating substrate in a Riber 32P set-up. Structural perfection of the heterostructures were determined using transmission electron microscopy and X-ray diffractometry. The purpose of this paper is to understand how the geometry of heterostructure and the indium content in the InxGa1—xAs layer influences the lattice perfection of the heterostructure. From the wide range of thicknesses and contents only those having practical application in devices were selected. The formation of dislocations in InxGa1—xAs/GaAs heterostructures with thin InxGa1—xAs layers, InxGa1—xAs multilayers grown on GaAs substrates and in index-graded InxGa1—xAs (x = 0.01 to 0.53) layers was studied. Conditions of the formation of defects were discussed. A mechanism of dislocation formation in index-graded InxGa1—xAs layers was proposed." @default.
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- W2034452597 date "1999-01-01" @default.
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- W2034452597 title "Formation of Dislocations in InGaAs/GaAs Heterostructures" @default.
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- W2034452597 doi "https://doi.org/10.1002/(sici)1521-396x(199901)171:1<275::aid-pssa275>3.0.co;2-m" @default.
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