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- W2034452844 abstract "Chemical reactions in the gas-phase and on surfaces are important in the chemical vapor deposition (CVD) of materials for microelectronic applications. General approaches for modeling the homogeneous and heterogeneous kinetics in CVD are discussed. A software framework for implementing the theory utilizing the CHEMKIN suite of codes is presented. Specific examples are drawn from the CVD of SiO2 using tetraethoxysilane (TEOS). Experimental molecular beam reactive-sticking coefficient studies were employed to extract surface-reaction rate constants. Numerical simulations were used to analyze the molecular-beam experiments and low-pressure tube furnace data, illustrating the general modeling approach." @default.
- W2034452844 created "2016-06-24" @default.
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- W2034452844 date "2000-04-01" @default.
- W2034452844 modified "2023-09-23" @default.
- W2034452844 title "Chemical kinetics in chemical vapor deposition: growth of silicon dioxide from tetraethoxysilane (TEOS)" @default.
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- W2034452844 doi "https://doi.org/10.1016/s0040-6090(99)01059-7" @default.
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